All MOSFET. STT600 Datasheet

 

STT600 Datasheet and Replacement


   Type Designator: STT600
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT223
 

 STT600 substitution

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STT600 Datasheet (PDF)

 ..1. Size:132K  samhop
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STT600

GreenProductSTT600aS mHop Microelectronics C orp.Ver 3.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.600 @ VGS=10VSurface Mount Package.1.4A90V708 @ VGS=4.5V D DG GDSSTT SERIESS SOT - 223ABSOLUTE MAXIMUM RATINGS (T

Datasheet: STU2455PLS , STU2240NL , STU20N15 , STU20L01A , STU20L01 , STU2030PLS , STU1955NL , STU1855PL , IRF3710 , STT468A , STT4660 , STT432S , STT3418 , STT3414 , STT10L01 , STT100 , STT08L01 .

History: WPMD2010 | SM1F14NSKP

Keywords - STT600 MOSFET datasheet

 STT600 cross reference
 STT600 equivalent finder
 STT600 lookup
 STT600 substitution
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