STT100 Datasheet and Replacement
Type Designator: STT100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.819 Ohm
Package: SOT223
STT100 substitution
STT100 Datasheet (PDF)
stt100.pdf
GreenProductSTT100aS mHop Microelectronics C orp.Ver 3.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.819 @ VGS=10VSuface Mount Package.100V 1.2A956 @ VGS=4.5V ESD Protected.D G GSSTT SERIESS SOT - 223ABSOLUTE MAXIMUM RATINGS (TA=25
stt10l01.pdf
GreenProductSTT10L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.140 @ VGS=10VSurface Mount Package.3A100V225 @ VGS=4.5VDGGSSTT SERIESSSOT - 223(TA=25C unless otherwise noted)
Datasheet: STU1855PL , STT600 , STT468A , STT4660 , STT432S , STT3418 , STT3414 , STT10L01 , 8205A , STT08L01 , STT06L01 , STT04N20 , STS8235 , STS8217 , STS8216 , STS8215 , STS8213 .
History: WML50P04TS | WML4N90D1B | VS4802GPMT | DMT7N65 | IRFF9231 | WMK80R1K0S | 2SK552
Keywords - STT100 MOSFET datasheet
STT100 cross reference
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STT100 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WML50P04TS | WML4N90D1B | VS4802GPMT | DMT7N65 | IRFF9231 | WMK80R1K0S | 2SK552
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