STT08L01 Specs and Replacement
Type Designator: STT08L01
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: SOT223
STT08L01 substitution
- MOSFET ⓘ Cross-Reference Search
STT08L01 datasheet
stt08l01.pdf
Gre r r P Pr Pr Pro STT08L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 225 @ VGS=10V Surface Mount Package. 2.5A 100V 360 @ VGS=4.5V D G G G S S STT SERIES S SOT - 223 (TA=25 C unless o... See More ⇒
Detailed specifications: STT600, STT468A, STT4660, STT432S, STT3418, STT3414, STT10L01, STT100, 7N65, STT06L01, STT04N20, STS8235, STS8217, STS8216, STS8215, STS8213, STS8212
Keywords - STT08L01 MOSFET specs
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