STT08L01 PDF and Equivalents Search

 

STT08L01 Specs and Replacement

Type Designator: STT08L01

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: SOT223

STT08L01 substitution

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STT08L01 datasheet

 ..1. Size:118K  samhop
stt08l01.pdf pdf_icon

STT08L01

Gre r r P Pr Pr Pro STT08L01 a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 225 @ VGS=10V Surface Mount Package. 2.5A 100V 360 @ VGS=4.5V D G G G S S STT SERIES S SOT - 223 (TA=25 C unless o... See More ⇒

Detailed specifications: STT600, STT468A, STT4660, STT432S, STT3418, STT3414, STT10L01, STT100, 7N65, STT06L01, STT04N20, STS8235, STS8217, STS8216, STS8215, STS8213, STS8212

Keywords - STT08L01 MOSFET specs

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