All MOSFET. STT08L01 Datasheet

 

STT08L01 Datasheet and Replacement


   Type Designator: STT08L01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: SOT223
 

 STT08L01 substitution

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STT08L01 Datasheet (PDF)

 ..1. Size:118K  samhop
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STT08L01

GrerrPPrPrProSTT08L01aS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.225 @ VGS=10VSurface Mount Package.2.5A100V360 @ VGS=4.5VDGGGSSSTT SERIESSSOT - 223(TA=25C unless o

Datasheet: STT600 , STT468A , STT4660 , STT432S , STT3418 , STT3414 , STT10L01 , STT100 , 7N65 , STT06L01 , STT04N20 , STS8235 , STS8217 , STS8216 , STS8215 , STS8213 , STS8212 .

History: WML25N65EM | WMLL010N04LG4

Keywords - STT08L01 MOSFET datasheet

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