All MOSFET. STT04N20 Datasheet

 

STT04N20 Datasheet and Replacement


   Type Designator: STT04N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: SOT223
 

 STT04N20 substitution

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STT04N20 Datasheet (PDF)

 ..1. Size:125K  samhop
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STT04N20

GreenProductSTT04N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () MaxVDSS IDRugged and reliable.1.8 @ VGS=10VSurface Mount Package.200V 1A2.0 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

Datasheet: STT4660 , STT432S , STT3418 , STT3414 , STT10L01 , STT100 , STT08L01 , STT06L01 , IRF630 , STS8235 , STS8217 , STS8216 , STS8215 , STS8213 , STS8212 , STS8207 , STS8205 .

History: STS3420

Keywords - STT04N20 MOSFET datasheet

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