STT04N20 Specs and Replacement
Type Designator: STT04N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 21 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: SOT223
STT04N20 substitution
- MOSFET ⓘ Cross-Reference Search
STT04N20 datasheet
Detailed specifications: STT4660, STT432S, STT3418, STT3414, STT10L01, STT100, STT08L01, STT06L01, IRF630, STS8235, STS8217, STS8216, STS8215, STS8213, STS8212, STS8207, STS8205
Keywords - STT04N20 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP2R803GS-HF | BSZ037N06LS5
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