STS8212 PDF and Equivalents Search

 

STS8212 Specs and Replacement

Type Designator: STS8212

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 164 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: TSOT26

STS8212 substitution

- MOSFET ⓘ Cross-Reference Search

 

STS8212 datasheet

 ..1. Size:105K  samhop
 sts8212.pdf pdf_icon

STS8212

Gre r r P Pr Pr Pro STS8212 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14.5 @ VGS=4.5V Suface Mount Package. 15 @ VGS=4.0V ESD Protected. 20V 8A 15.5 @ VGS=3.7V 18 @ VGS=3.1V 22 @ VGS=2.5V D1 D2 TSOT ... See More ⇒

 8.1. Size:179K  samhop
 sts8216.pdf pdf_icon

STS8212

Green Product STS8216 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 6A 27 @ VGS=2.5V ESD Protected. D1 D2 SOT 26 Top View S1 G1 6 1 G 1 G 2 D1/D2 2 5 D1/D2 3 ... See More ⇒

 8.2. Size:105K  samhop
 sts8217.pdf pdf_icon

STS8212

Gre r r P Pr Pr Pro STS8217 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16.5 @ VGS=4.0V Suface Mount Package. 17 @ VGS=3.7V 24V 7A ESD Protected. 18 @ VGS=3.1V 27 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒

 8.3. Size:106K  samhop
 sts8215.pdf pdf_icon

STS8212

Gre r r P Pr Pr Pro STS8215 a S mHop Microelectronics C orp. Ver 2.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 24.5 @ VGS=4.5V Suface Mount Package. 25.5 @ VGS=4.0V ESD Protected. 20V 5.5A 27.5 @ VGS=3.7V 30.5 @ VGS=3.1V 36.5 @ VGS=2.5V D1 D... See More ⇒

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Detailed specifications: STT08L01, STT06L01, STT04N20, STS8235, STS8217, STS8216, STS8215, STS8213, IRF9540N, STS8207, STS8205, STS8202, STS8201, STS3420, STS3419, STS3417, STS3415

Keywords - STS8212 MOSFET specs

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