All MOSFET. STS8205 Datasheet

 

STS8205 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STS8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOT26

 STS8205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STS8205 Datasheet (PDF)

 ..1. Size:106K  samhop
 sts8205.pdf

STS8205 STS8205

GrerrPPrPrProSTS8205aS mHop Microelectronics C orp.Ver 4.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.27.5 @ VGS=4.5VSuface Mount Package.28.5 @ VGS=4.0VESD Protected.20V 5A 30.0 @ VGS=3.7V33.0 @ VGS=3.1V38.0 @ VGS=2.5VD1 D2

 8.1. Size:113K  samhop
 sts8202.pdf

STS8205 STS8205

GreenProductSTS8202aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.27 @ VGS=4.5VSuface Mount Package.28 @ VGS=4.0V ESD Protected.20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26Top Vi

 8.2. Size:105K  samhop
 sts8207.pdf

STS8205 STS8205

GrerrPPrPrProSTS8207aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.34 @ VGS=4.0VSuface Mount Package.36 @ VGS=3.7V20V 4.5AESD Protected.40 @ VGS=3.1V49 @ VGS=2.5VD1 D2TSOT 26Top ViewS1

 8.3. Size:106K  samhop
 sts8201.pdf

STS8205 STS8205

GrerrPPrPrProSTS8201aS mHop Microelectronics C orp.Ver 2.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.20.0 @ VGS=4.5VSuface Mount Package.21.0 @ VGS=4.0VESD Protected.20V 6A 21.5 @ VGS=3.7V24.5 @ VGS=3.1V29.5 @ VGS=2.5VD1 D2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top