STS8205 PDF and Equivalents Search

 

STS8205 Specs and Replacement

Type Designator: STS8205

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm

Package: SOT26

STS8205 substitution

- MOSFET ⓘ Cross-Reference Search

 

STS8205 datasheet

 ..1. Size:106K  samhop
 sts8205.pdf pdf_icon

STS8205

Gre r r P Pr Pr Pro STS8205 a S mHop Microelectronics C orp. Ver 4.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27.5 @ VGS=4.5V Suface Mount Package. 28.5 @ VGS=4.0V ESD Protected. 20V 5A 30.0 @ VGS=3.7V 33.0 @ VGS=3.1V 38.0 @ VGS=2.5V D1 D2 ... See More ⇒

 8.1. Size:113K  samhop
 sts8202.pdf pdf_icon

STS8205

Green Product STS8202 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27 @ VGS=4.5V Suface Mount Package. 28 @ VGS=4.0V ESD Protected. 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26 Top Vi... See More ⇒

 8.2. Size:105K  samhop
 sts8207.pdf pdf_icon

STS8205

Gre r r P Pr Pr Pro STS8207 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 34 @ VGS=4.0V Suface Mount Package. 36 @ VGS=3.7V 20V 4.5A ESD Protected. 40 @ VGS=3.1V 49 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒

 8.3. Size:106K  samhop
 sts8201.pdf pdf_icon

STS8205

Gre r r P Pr Pr Pro STS8201 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20.0 @ VGS=4.5V Suface Mount Package. 21.0 @ VGS=4.0V ESD Protected. 20V 6A 21.5 @ VGS=3.7V 24.5 @ VGS=3.1V 29.5 @ VGS=2.5V D1 D2 ... See More ⇒

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Detailed specifications: STT04N20, STS8235, STS8217, STS8216, STS8215, STS8213, STS8212, STS8207, IRLB4132, STS8202, STS8201, STS3420, STS3419, STS3417, STS3415, STS3414, STM8501

Keywords - STS8205 MOSFET specs

 STS8205 cross reference

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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