STS8201 MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

STS8201 Specs and Replacement

Type Designator: STS8201

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 156 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT26

STS8201 substitution

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STS8201 datasheet

..1. Size:106K samhop
sts8201.pdf pdf_icon

Gre r r P Pr Pr Pro STS8201 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20.0 @ VGS=4.5V Suface Mount Package. 21.0 @ VGS=4.0V ESD Protected. 20V 6A 21.5 @ VGS=3.7V 24.5 @ VGS=3.1V 29.5 @ VGS=2.5V D1 D2 ... See More ⇒

8.1. Size:113K samhop
sts8202.pdf pdf_icon

Green Product STS8202 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27 @ VGS=4.5V Suface Mount Package. 28 @ VGS=4.0V ESD Protected. 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26 Top Vi... See More ⇒

8.2. Size:106K samhop
sts8205.pdf pdf_icon

Gre r r P Pr Pr Pro STS8205 a S mHop Microelectronics C orp. Ver 4.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27.5 @ VGS=4.5V Suface Mount Package. 28.5 @ VGS=4.0V ESD Protected. 20V 5A 30.0 @ VGS=3.7V 33.0 @ VGS=3.1V 38.0 @ VGS=2.5V D1 D2 ... See More ⇒

8.3. Size:105K samhop
sts8207.pdf pdf_icon

Gre r r P Pr Pr Pro STS8207 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 34 @ VGS=4.0V Suface Mount Package. 36 @ VGS=3.7V 20V 4.5A ESD Protected. 40 @ VGS=3.1V 49 @ VGS=2.5V D1 D2 TSOT 26 Top View S1... See More ⇒

Detailed specifications: STS8217, STS8216, STS8215, STS8213, STS8212, STS8207, STS8205, STS8202, K3569, STS3420, STS3419, STS3417, STS3415, STS3414, STM8501, STM8500A, STM8458