STS8201 - аналоги, параметры транзистора - Справочник транзисторов

STS8201 даташит

..1. Size:106K samhop
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Gre r r P Pr Pr Pro STS8201 a S mHop Microelectronics C orp. Ver 2.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20.0 @ VGS=4.5V Suface Mount Package. 21.0 @ VGS=4.0V ESD Protected. 20V 6A 21.5 @ VGS=3.7V 24.5 @ VGS=3.1V 29.5 @ VGS=2.5V D1 D2

8.1. Size:113K samhop
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Green Product STS8202 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27 @ VGS=4.5V Suface Mount Package. 28 @ VGS=4.0V ESD Protected. 20V 5A 30 @ VGS=3.7V 33 @ VGS=3.1V 38 @ VGS=2.5V D1 D2 TSOT 26 Top Vi

8.2. Size:106K samhop
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Gre r r P Pr Pr Pro STS8205 a S mHop Microelectronics C orp. Ver 4.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 27.5 @ VGS=4.5V Suface Mount Package. 28.5 @ VGS=4.0V ESD Protected. 20V 5A 30.0 @ VGS=3.7V 33.0 @ VGS=3.1V 38.0 @ VGS=2.5V D1 D2

8.3. Size:105K samhop
sts8207.pdf pdf_icon

Gre r r P Pr Pr Pro STS8207 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 34 @ VGS=4.0V Suface Mount Package. 36 @ VGS=3.7V 20V 4.5A ESD Protected. 40 @ VGS=3.1V 49 @ VGS=2.5V D1 D2 TSOT 26 Top View S1

Другие MOSFET... STS8217 , STS8216 , STS8215 , STS8213 , STS8212 , STS8207 , STS8205 , STS8202 , K3569 , STS3420 , STS3419 , STS3417 , STS3415 , STS3414 , STM8501 , STM8500A , STM8458 .