STM8501 PDF and Equivalents Search

 

STM8501 Specs and Replacement

Type Designator: STM8501

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO-8

STM8501 substitution

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STM8501 datasheet

 ..1. Size:828K  samhop
 stm8501.pdf pdf_icon

STM8501

S T M8501 S amHop Microelectronics C orp. J an.10 2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) (N-C hannel) (P P R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel) V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 50 @ V G S = 10V 80 @ V G S = -10V -55V - 3.5A 55V 5A 70 @ V G S = 4.5V 100 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3... See More ⇒

 8.1. Size:208K  samhop
 stm8500a.pdf pdf_icon

STM8501

STM8500A a S mHop Microelectronics C orp. Ver 2.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Typ RDS(ON) (m ) Typ VDSS ID VDSS ID 46 @ VGS=10V 85 @ VGS=-10V 55V 4.6A -55V -3.5A 56 @ VGS=4.5V 105 @ VGS=-4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 2 3 4 1 S 1 G 1 S 2 G 2 (TA=25 C unless otherwis... See More ⇒

Detailed specifications: STS8205, STS8202, STS8201, STS3420, STS3419, STS3417, STS3415, STS3414, 13N50, STM8500A, STM8458, STM8457, STM8456, STM6968, STM6967, STM6966, STM6962

Keywords - STM8501 MOSFET specs

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