STC3116E MOSFET Datasheet: N-Ch, 30V, 2A. Full specification with pinout and replacement list

STC3116E Specs and Replacement

Type Designator: STC3116E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 56 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: SOT323

STC3116E substitution

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STC3116E datasheet

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Gre r r P Pr Pr Pro STC3116E a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 94 @ VGS=10V Suface Mount Package. 30V 2A 107 @ VGS=4.5V ESD Protected. 139 @ VGS=2.5V D SOT-323 G D S G S (TA=25 C unless other... See More ⇒

Detailed specifications: STF8211, STF8209A, STF8209, STE336S, STE334S, STD628S, STD1955NL, STD12L01A, IRFZ24N, STC2201, STC2200, STB8444, STB80L60, SP8009E, SP8009, SP8008, SP8007