All MOSFET. STC3116E Datasheet

 

STC3116E Datasheet and Replacement


   Type Designator: STC3116E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.8 nC
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: SOT323
 

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STC3116E Datasheet (PDF)

 ..1. Size:91K  samhop
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STC3116E

GrerrPPrPrProSTC3116EaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.94 @ VGS=10VSuface Mount Package.30V 2A 107 @ VGS=4.5VESD Protected.139 @ VGS=2.5VDSOT-323GDSGS(TA=25C unless other

Datasheet: STF8211 , STF8209A , STF8209 , STE336S , STE334S , STD628S , STD1955NL , STD12L01A , AON6380 , STC2201 , STC2200 , STB8444 , STB80L60 , SP8009E , SP8009 , SP8008 , SP8007 .

History: TJ100F04M3L

Keywords - STC3116E MOSFET datasheet

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