All MOSFET. STB8444 Datasheet

 

STB8444 Datasheet and Replacement


   Type Designator: STB8444
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 162 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO263
 

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STB8444 Datasheet (PDF)

 ..1. Size:228K  samhop
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STB8444

STB/P8444aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.40V 80A 4.8 @ VGS=10V TO-220 and TO-263 Package.DGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-220S(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGS

Datasheet: STE336S , STE334S , STD628S , STD1955NL , STD12L01A , STC3116E , STC2201 , STC2200 , MMIS60R580P , STB80L60 , SP8009E , SP8009 , SP8008 , SP8007 , SP8006 , SDT01N02 , SDM4410 .

History: STC2201 | SI9435BDY | SM1A23NSV

Keywords - STB8444 MOSFET datasheet

 STB8444 cross reference
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