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STB8444 Specs and Replacement

Type Designator: STB8444

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 162 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO263

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STB8444 datasheet

 ..1. Size:228K  samhop
 stb8444.pdf pdf_icon

STB8444

STB/P8444 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 40V 80A 4.8 @ VGS=10V TO-220 and TO-263 Package. D G STB SERIES STP SERIES TO-263(DD-PAK) TO-220 S (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: STE336S, STE334S, STD628S, STD1955NL, STD12L01A, STC3116E, STC2201, STC2200, P60NF06, STB80L60, SP8009E, SP8009, SP8008, SP8007, SP8006, SDT01N02, SDM4410

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