STB80L60 PDF and Equivalents Search

 

STB80L60 Specs and Replacement

Type Designator: STB80L60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm

Package: TO263

STB80L60 substitution

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STB80L60 datasheet

 ..1. Size:176K  samhop
stb80l60 stp80l60.pdf pdf_icon

STB80L60

Green Product STB/P80L60 a S mHop Microelectronics C orp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). VDSS ID RDS(ON) (m ) Typ High power and current handling capability. 60V 80A 8.0 @ VGS=10V TO-220 & TO-263 package. D G STP SERIES STB SERIES TO-220 TO-263(DD-P AK) S... See More ⇒

 9.1. Size:447K  st
stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

STB80L60

STB80NF55-06 - STB80NF55-06-1 STP80NF55-06 - STP80NF55-06FP N-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB80NF55-06 55V ... See More ⇒

 9.3. Size:579K  st
stb80nf10 stp80nf10.pdf pdf_icon

STB80L60

STB80NF10 STP80NF10 N-channel 100 V, 0.012 , 80 A, TO-220, D2PAK low gate charge STripFET II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF10 100 V ... See More ⇒

Detailed specifications: STE334S, STD628S, STD1955NL, STD12L01A, STC3116E, STC2201, STC2200, STB8444, 75N75, SP8009E, SP8009, SP8008, SP8007, SP8006, SDT01N02, SDM4410, SDK03N04

Keywords - STB80L60 MOSFET specs

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