All MOSFET. SDT01N02 Datasheet

 

SDT01N02 Datasheet and Replacement


   Type Designator: SDT01N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT223
      - MOSFET Cross-Reference Search

 

SDT01N02 Datasheet (PDF)

 ..1. Size:124K  samhop
 sdt01n02.pdf pdf_icon

SDT01N02

GreenProductSDT01N02aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) () TypR ugged and reliable.Surface Mount Package.200V 1.5A 3.5 @ VGS=10VDGGSSSOT-223ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

Keywords - SDT01N02 MOSFET datasheet

 SDT01N02 cross reference
 SDT01N02 equivalent finder
 SDT01N02 lookup
 SDT01N02 substitution
 SDT01N02 replacement

 

 
Back to Top

 


 
.