All MOSFET. SDT01N02 Datasheet

 

SDT01N02 Datasheet and Replacement


   Type Designator: SDT01N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT223
 

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SDT01N02 Datasheet (PDF)

 ..1. Size:124K  samhop
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SDT01N02

GreenProductSDT01N02aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) () TypR ugged and reliable.Surface Mount Package.200V 1.5A 3.5 @ VGS=10VDGGSSSOT-223ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter

Datasheet: STC2200 , STB8444 , STB80L60 , SP8009E , SP8009 , SP8008 , SP8007 , SP8006 , 60N06 , SDM4410 , SDK03N04 , SDF18N50 , SDF08N60 , SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 .

History: KHB9D0N90NA | CS4N60FA9R | SI1013CX | BR80N75 | 2SK1436 | SVF4N65FG | 2SK2869-ZJ

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