SDT01N02 PDF and Equivalents Search

 

SDT01N02 Specs and Replacement

Type Designator: SDT01N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT223

SDT01N02 substitution

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SDT01N02 datasheet

 ..1. Size:124K  samhop
 sdt01n02.pdf pdf_icon

SDT01N02

Green Product SDT01N02 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). VDSS ID RDS(ON) ( ) Typ R ugged and reliable. Surface Mount Package. 200V 1.5A 3.5 @ VGS=10V D G G S S SOT-223 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter... See More ⇒

Detailed specifications: STC2200, STB8444, STB80L60, SP8009E, SP8009, SP8008, SP8007, SP8006, IRFZ48N, SDM4410, SDK03N04, SDF18N50, SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20

Keywords - SDT01N02 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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