All MOSFET. SDT01N02 Datasheet

 

SDT01N02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SDT01N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.4 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT223

 SDT01N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SDT01N02 Datasheet (PDF)

 ..1. Size:124K  samhop
 sdt01n02.pdf

SDT01N02 SDT01N02

GreenProductSDT01N02aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYS uper high dense cell design for low R DS (ON).VDSS ID RDS(ON) () TypR ugged and reliable.Surface Mount Package.200V 1.5A 3.5 @ VGS=10VDGGSSSOT-223ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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