SDK03N04 Specs and Replacement
Type Designator: SDK03N04
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 38 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT89
SDK03N04 substitution
- MOSFET ⓘ Cross-Reference Search
SDK03N04 datasheet
sdk03n04.pdf
Green Product SDK03N04 a S mHop Microelectronics C orp. Ver 1.3 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 400V 1.5A 3.5 @ VGS=10V SOT-89 Package. D D G S D G SOT-89 S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Units ... See More ⇒
Detailed specifications: STB80L60, SP8009E, SP8009, SP8008, SP8007, SP8006, SDT01N02, SDM4410, IRF830, SDF18N50, SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20, SDD07N65, FQA18N50V2
Keywords - SDK03N04 MOSFET specs
SDK03N04 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SDF18N50
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