SDK03N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: SDK03N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 38 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT89
SDK03N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SDK03N04 Datasheet (PDF)
sdk03n04.pdf
GreenProductSDK03N04aS mHop Microelectronics C orp.Ver 1.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.400V 1.5A 3.5 @ VGS=10V SOT-89 Package.DDGSDGSOT-89SABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter Units
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NCE65TF180D
History: NCE65TF180D
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