All MOSFET. SDK03N04 Datasheet

 

SDK03N04 Datasheet and Replacement


   Type Designator: SDK03N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT89
 

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SDK03N04 Datasheet (PDF)

 ..1. Size:116K  samhop
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SDK03N04

GreenProductSDK03N04aS mHop Microelectronics C orp.Ver 1.3N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.400V 1.5A 3.5 @ VGS=10V SOT-89 Package.DDGSDGSOT-89SABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter Units

Datasheet: STB80L60 , SP8009E , SP8009 , SP8008 , SP8007 , SP8006 , SDT01N02 , SDM4410 , IRF1405 , SDF18N50 , SDF08N60 , SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 .

History: IRHG9110 | IRF8736PBF | TK7E80W

Keywords - SDK03N04 MOSFET datasheet

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