SDF18N50 PDF and Equivalents Search

 

SDF18N50 Specs and Replacement

Type Designator: SDF18N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO220F

SDF18N50 substitution

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SDF18N50 datasheet

 ..1. Size:665K  samhop
 sdf18n50 sdp18n50.pdf pdf_icon

SDF18N50

SDP18N50 SDF18N50 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 500V 18A 0.25 @ VGS=10V TO-220 and TO-220F Package. D G G D S G D S SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M... See More ⇒

Detailed specifications: SP8009E, SP8009, SP8008, SP8007, SP8006, SDT01N02, SDM4410, SDK03N04, IRLB3034, SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20, SDD07N65, FQA18N50V2, FQA19N20C

Keywords - SDF18N50 MOSFET specs

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