All MOSFET. SDF18N50 Datasheet

 

SDF18N50 Datasheet and Replacement


   Type Designator: SDF18N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO220F
 

 SDF18N50 substitution

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SDF18N50 Datasheet (PDF)

 ..1. Size:665K  samhop
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SDF18N50

SDP18N50SDF18N50aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.500V 18A 0.25 @ VGS=10V TO-220 and TO-220F Package.DGG D S G D SSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M

Datasheet: SP8009E , SP8009 , SP8008 , SP8007 , SP8006 , SDT01N02 , SDM4410 , SDK03N04 , 60N06 , SDF08N60 , SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C .

History: FQP9N50C | BRI630 | ME120N10T-G | DH020N03 | IRF6668PBF | 2SK1500 | FS10VS-9A

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