SDD07N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: SDD07N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 15 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 93 pF
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO251, IPAK
SDD07N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SDD07N65 Datasheet (PDF)
0.1. sdu07n65 sdd07n65.pdf 
Size:131K _samhop
Green Product SDU/D07N65 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 650V 7A 1.2 @ VGS=10V Suface Mount Package. D G G S S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) O
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