SDD07N65 Datasheet. Specs and Replacement

Type Designator: SDD07N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251 IPAK

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SDD07N65 datasheet

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SDD07N65

Green Product SDU/D07N65 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 650V 7A 1.2 @ VGS=10V Suface Mount Package. D G G S S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) O... See More ⇒

Detailed specifications: SDM4410, SDK03N04, SDF18N50, SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20, 3401, FQA18N50V2, FQA19N20C, FQA38N30, FQB46N15, FQI46N15, FQP10N50CF, FDB86366F085, FCH077N65FF085

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