All MOSFET. SDD07N65 Datasheet


SDD07N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: SDD07N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 94 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 93 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO251, IPAK

SDD07N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SDD07N65 Datasheet (PDF)

0.1. sdu07n65 sdd07n65.pdf Size:131K _samhop


Green Product SDU/D07N65 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 650V 7A 1.2 @ VGS=10V Suface Mount Package. D G G S S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) O

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