FQA38N30 PDF and Equivalents Search

 

FQA38N30 Specs and Replacement

Type Designator: FQA38N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 430 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO3P

FQA38N30 substitution

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FQA38N30 datasheet

 ..1. Size:696K  fairchild semi
 fqa38n30.pdf pdf_icon

FQA38N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has bee... See More ⇒

 ..2. Size:733K  onsemi
 fqa38n30.pdf pdf_icon

FQA38N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has bee... See More ⇒

Detailed specifications: SDF08N60, SDF04N40, SDF03N80, SDF02N65, SDF02N20, SDD07N65, FQA18N50V2, FQA19N20C, AO4407A, FQB46N15, FQI46N15, FQP10N50CF, FDB86366F085, FCH077N65FF085, FCH190N65FF085, FQT2P25, FQU1N80

Keywords - FQA38N30 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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