All MOSFET. FQA38N30 Datasheet

 

FQA38N30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA38N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 38.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 430 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO3P

 FQA38N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA38N30 Datasheet (PDF)

 ..1. Size:696K  fairchild semi
 fqa38n30.pdf

FQA38N30 FQA38N30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has bee

 ..2. Size:733K  onsemi
 fqa38n30.pdf

FQA38N30 FQA38N30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has bee

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History: 2SJ529S | QM4003S

 

 
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