All MOSFET. FQA38N30 Datasheet

 

FQA38N30 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQA38N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 290 W
   Maximum Drain-Source Voltage |Vds|: 300 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 38.4 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 90 nC
   Rise Time (tr): 430 nS
   Drain-Source Capacitance (Cd): 670 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm
   Package: TO3P

 FQA38N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA38N30 Datasheet (PDF)

 ..1. Size:696K  fairchild semi
 fqa38n30.pdf

FQA38N30 FQA38N30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has bee

 ..2. Size:733K  onsemi
 fqa38n30.pdf

FQA38N30 FQA38N30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has bee

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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