FQA38N30 Datasheet and Replacement
Type Designator: FQA38N30
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 38.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 430 nS
Cossⓘ - Output Capacitance: 670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO3P
FQA38N30 substitution
FQA38N30 Datasheet (PDF)
fqa38n30.pdf
April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has bee
fqa38n30.pdf
April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 38.4A, 300V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has bee
Datasheet: SDF08N60 , SDF04N40 , SDF03N80 , SDF02N65 , SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , AO3407 , FQB46N15 , FQI46N15 , FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 .
History: AP4543GEH-HF | NTHD3101FT3 | NVMFD5483NL
Keywords - FQA38N30 MOSFET datasheet
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History: AP4543GEH-HF | NTHD3101FT3 | NVMFD5483NL
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