SSU1N50B PDF and Equivalents Search

 

SSU1N50B Specs and Replacement

Type Designator: SSU1N50B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 520 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm

Package: TO251 IPAK

SSU1N50B substitution

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SSU1N50B datasheet

 ..1. Size:688K  fairchild semi
 ssu1n50b.pdf pdf_icon

SSU1N50B

April 2014 SSU1N50B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 8.3 nC) planar, DMOS technology. Low Crss (Typ. 5.5 pF) This advanced technology has been especially tailored to Fast Switching... See More ⇒

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SSU1N50B

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 9.1. Size:196K  1
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SSU1N50B

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 9.2. Size:678K  fairchild semi
 ssr1n60b ssr1n60btm ssu1n60b.pdf pdf_icon

SSU1N50B

November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.9 nC) planar, DMOS technology. Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to... See More ⇒

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Detailed specifications: FQP10N50CF , FDB86366F085 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 , FDC645N , SI3457DV , IRF540 , FDP070AN06A0 , FQPF5N60C , FQP9N50C , FQPF9N50C , FDD6296 , FCP16N60 , FDS8960C , FCPF11N60F .

Keywords - SSU1N50B MOSFET specs

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