All MOSFET. SSU1N50B Datasheet

 

SSU1N50B Datasheet and Replacement


   Type Designator: SSU1N50B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 520 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.3 nC
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.3 Ohm
   Package: TO251 IPAK
 

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SSU1N50B Datasheet (PDF)

 ..1. Size:688K  fairchild semi
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SSU1N50B

April 2014SSU1N50B520V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.3A, 520V, RDS(on) = 5.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low Gate Charge (Typ. 8.3 nC)planar, DMOS technology. Low Crss (Typ. 5.5 pF)This advanced technology has been especially tailored to Fast Switching

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SSU1N50B

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SSU1N50B

 9.2. Size:678K  fairchild semi
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SSU1N50B

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - SSU1N50B MOSFET datasheet

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