All MOSFET. FDD6296 Datasheet

 

FDD6296 Datasheet and Replacement


   Type Designator: FDD6296
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO252
 

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FDD6296 Datasheet (PDF)

 ..1. Size:105K  fairchild semi
 fdd6296 fdd6296 fdu6296.pdf pdf_icon

FDD6296

June 2004FDD6296/FDU629630V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V RDS(ON) = 8.8 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 11.3 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for

 ..2. Size:309K  inchange semiconductor
 fdd6296.pdf pdf_icon

FDD6296

isc N-Channel MOSFET Transistor FDD6296FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FQU1N80 , FDC645N , SI3457DV , SSU1N50B , FDP070AN06A0 , FQPF5N60C , FQP9N50C , FQPF9N50C , IRF1404 , FCP16N60 , FDS8960C , FCPF11N60F , HUF76645SF085 , FCPF20N60 , FDS8672S , FDB045AN08F085 , FQB10N50CFTM .

History: 60N10E

Keywords - FDD6296 MOSFET datasheet

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