FDZ661PZ PDF and Equivalents Search

 

FDZ661PZ Specs and Replacement

Type Designator: FDZ661PZ

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: WLCSP

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FDZ661PZ datasheet

 ..1. Size:268K  fairchild semi
 fdz661pz.pdf pdf_icon

FDZ661PZ

December 2011 FDZ661PZ P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 m Features General Description Max rDS(on) = 140 m at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 182 m at VGS = -2.5 V, ID = -1.5 A the FDZ661PZ minimizes ... See More ⇒

 ..2. Size:1440K  onsemi
 fdz661pz.pdf pdf_icon

FDZ661PZ

... See More ⇒

 9.1. Size:255K  fairchild semi
 fdz663p.pdf pdf_icon

FDZ661PZ

December 2011 FDZ663P P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 171 m at VGS = -2.5 V, ID = -1.5 A the FDZ663P minimizes bo... See More ⇒

Detailed specifications: FDI045N10A, FDP045N10A, FDP150N10A, FDP020N06B, FDP027N08B, FDMA8884, FDC8878, FDC8884, STP75NF75, FDZ663P, FDMC86320, FDD8424HF085A, FDMS86320, FDD5N60NZ, FDD7N60NZ, FDMS8020, FDU7N60NZTU

Keywords - FDZ661PZ MOSFET specs

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