All MOSFET. FDZ661PZ Datasheet

 

FDZ661PZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDZ661PZ
   Marking Code: EH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: WLCSP

 FDZ661PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDZ661PZ Datasheet (PDF)

 ..1. Size:268K  fairchild semi
 fdz661pz.pdf

FDZ661PZ FDZ661PZ

December 2011FDZ661PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mFeatures General Description Max rDS(on) = 140 m at VGS = -4.5 V, ID = -2 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 182 m at VGS = -2.5 V, ID = -1.5 Athe FDZ661PZ minimizes

 ..2. Size:1440K  onsemi
 fdz661pz.pdf

FDZ661PZ FDZ661PZ

 9.1. Size:255K  fairchild semi
 fdz663p.pdf

FDZ661PZ FDZ661PZ

December 2011FDZ663PP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = -4.5 V, ID = -2 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 171 m at VGS = -2.5 V, ID = -1.5 Athe FDZ663P minimizes bo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT30M19JVR

 

 
Back to Top