All MOSFET. FDZ661PZ Datasheet

 

FDZ661PZ Datasheet and Replacement


   Type Designator: FDZ661PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: WLCSP
 

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FDZ661PZ Datasheet (PDF)

 ..1. Size:268K  fairchild semi
 fdz661pz.pdf pdf_icon

FDZ661PZ

December 2011FDZ661PZP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mFeatures General Description Max rDS(on) = 140 m at VGS = -4.5 V, ID = -2 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 182 m at VGS = -2.5 V, ID = -1.5 Athe FDZ661PZ minimizes

 ..2. Size:1440K  onsemi
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FDZ661PZ

 9.1. Size:255K  fairchild semi
 fdz663p.pdf pdf_icon

FDZ661PZ

December 2011FDZ663PP-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = -4.5 V, ID = -2 ADesigned on Fairchild's advanced 1.5 V PowerTrench process with state of the art "fine pitch" Thin WLCSP packaging process, Max rDS(on) = 171 m at VGS = -2.5 V, ID = -1.5 Athe FDZ663P minimizes bo

Datasheet: FDI045N10A , FDP045N10A , FDP150N10A , FDP020N06B , FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , 12N60 , FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU .

History: ME50N06A-G

Keywords - FDZ661PZ MOSFET datasheet

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