FDU7N60NZTU Datasheet. Specs and Replacement

Type Designator: FDU7N60NZTU  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: TO251 IPAK

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FDU7N60NZTU datasheet

 ..1. Size:663K  fairchild semi
 fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf pdf_icon

FDU7N60NZTU

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- Low Crs... See More ⇒

 9.1. Size:346K  fairchild semi
 fdd7n20 fdu7n20.pdf pdf_icon

FDU7N60NZTU

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69 Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge( Typ. 5nC ) stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee... See More ⇒

Detailed specifications: FDZ661PZ, FDZ663P, FDMC86320, FDD8424HF085A, FDMS86320, FDD5N60NZ, FDD7N60NZ, FDMS8020, 4435, FCPF190N60, FDPF4N60NZ, FDMC86116LZ, FDB024N08BL7, FDMS86250, FDMS86540, FDMS3626S, FDMC8010

Keywords - FDU7N60NZTU MOSFET specs

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