All MOSFET. FDU7N60NZTU Datasheet

 

FDU7N60NZTU Datasheet and Replacement


   Type Designator: FDU7N60NZTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO251 IPAK
 

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FDU7N60NZTU Datasheet (PDF)

 ..1. Size:663K  fairchild semi
 fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf pdf_icon

FDU7N60NZTU

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs

 9.1. Size:346K  fairchild semi
 fdd7n20 fdu7n20.pdf pdf_icon

FDU7N60NZTU

April 2007UniFETTMFDD7N20 / FDU7N20tmN-Channel MOSFET 200V, 5A, 0.69Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC )stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee

Datasheet: FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , 4435 , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 .

History: IPAN60R600P7S

Keywords - FDU7N60NZTU MOSFET datasheet

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