All MOSFET. FDU7N60NZTU Datasheet

 

FDU7N60NZTU MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDU7N60NZTU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO251 IPAK

 FDU7N60NZTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDU7N60NZTU Datasheet (PDF)

 ..1. Size:663K  fairchild semi
 fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf

FDU7N60NZTU FDU7N60NZTU

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs

 9.1. Size:346K  fairchild semi
 fdd7n20 fdu7n20.pdf

FDU7N60NZTU FDU7N60NZTU

April 2007UniFETTMFDD7N20 / FDU7N20tmN-Channel MOSFET 200V, 5A, 0.69Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC )stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT1004RCN

 

 
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