All MOSFET. FDU7N60NZTU Datasheet

 

FDU7N60NZTU MOSFET. Datasheet pdf. Equivalent

Type Designator: FDU7N60NZTU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: TO251, IPAK

FDU7N60NZTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDU7N60NZTU Datasheet (PDF)

1.1. fdu7n60nztu.pdf Size:663K _fairchild_semi

FDU7N60NZTU
FDU7N60NZTU

November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs

5.1. fdd7n20 fdu7n20.pdf Size:346K _fairchild_semi

FDU7N60NZTU
FDU7N60NZTU

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69? Features Description RDS(on) = 0.58? ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC ) stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has been especically

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