FDU7N60NZTU Datasheet and Replacement
Type Designator: FDU7N60NZTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO251 IPAK
FDU7N60NZTU substitution
FDU7N60NZTU Datasheet (PDF)
fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf

November 2013FDD7N60NZ / FDU7N60NZTUN-Channel UniFETTM II MOSFET600 V, 5.5 A, 1.25 Features Description RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 13 nC)technology. This advanced MOSFET family has the smallest on- Low Crs
fdd7n20 fdu7n20.pdf

April 2007UniFETTMFDD7N20 / FDU7N20tmN-Channel MOSFET 200V, 5A, 0.69Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge( Typ. 5nC )stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee
Datasheet: FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , 2SK3568 , FCPF190N60 , FDPF4N60NZ , FDMC86116LZ , FDB024N08BL7 , FDMS86250 , FDMS86540 , FDMS3626S , FDMC8010 .
History: UT6402 | SIHLI520G | IRFR15N20D | HM4240 | 50N06F | 2SJ380 | R6006KND3
Keywords - FDU7N60NZTU MOSFET datasheet
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History: UT6402 | SIHLI520G | IRFR15N20D | HM4240 | 50N06F | 2SJ380 | R6006KND3



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