FDU7N60NZTU MOSFET. Datasheet pdf. Equivalent
Type Designator: FDU7N60NZTU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 5.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 70 pF
Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm
Package: TO251, IPAK
FDU7N60NZTU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDU7N60NZTU Datasheet (PDF)
0.1. fdd7n60nz fdd7n60nztm fdu7n60nztu.pdf 
Size:663K _fairchild_semi
November 2013 FDD7N60NZ / FDU7N60NZTU N-Channel UniFETTM II MOSFET 600 V, 5.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 2.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 13 nC) technology. This advanced MOSFET family has the smallest on- • Low Crs
9.1. fdd7n20 fdu7n20.pdf Size:346K _fairchild_semi
April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69Ω Features Description • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge( Typ. 5nC ) stripe, DMOS technology. • Low Crss ( Typ. 5pF ) This advanced technology has bee
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
