FCU900N60Z PDF and Equivalents Search

 

FCU900N60Z Specs and Replacement

Type Designator: FCU900N60Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.3 nS

Cossⓘ - Output Capacitance: 399 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO251 IPAK

FCU900N60Z substitution

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FCU900N60Z datasheet

 ..1. Size:606K  fairchild semi
 fcu900n60z.pdf pdf_icon

FCU900N60Z

December 2013 FCU900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m Features Description 675 V @ TJ = 150oC SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC) and lo... See More ⇒

 ..2. Size:300K  onsemi
 fcu900n60z.pdf pdf_icon

FCU900N60Z

FCU900N60Z MOSFET, N-Channel, SuperFET) II 600 V, 4.5 A, 900 mW www.onsemi.com Description SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge D balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior swit... See More ⇒

Detailed specifications: FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , FDMQ86530L , FDB035AN06F085 , FCP260N60E , FCPF260N60E , IRFP460 , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B .

History: FDB3632F085

Keywords - FCU900N60Z MOSFET specs

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