All MOSFET. FCU900N60Z Datasheet

 

FCU900N60Z Datasheet and Replacement


   Type Designator: FCU900N60Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.3 nS
   Cossⓘ - Output Capacitance: 399 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO251 IPAK
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FCU900N60Z Datasheet (PDF)

 ..1. Size:606K  fairchild semi
 fcu900n60z.pdf pdf_icon

FCU900N60Z

December 2013FCU900N60ZN-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 mFeatures Description 675 V @ TJ = 150oC SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 820 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 13 nC)and lo

 ..2. Size:300K  onsemi
 fcu900n60z.pdf pdf_icon

FCU900N60Z

FCU900N60ZMOSFET, N-Channel,SuperFET) II600 V, 4.5 A, 900 mWwww.onsemi.comDescriptionSuperFET II MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeDbalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeconduction loss, provide superior swit

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History: VBNC1303 | IRFS4010PBF

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