FDI9406F085 PDF and Equivalents Search

 

FDI9406F085 Specs and Replacement

Type Designator: FDI9406F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 81 nS

Cossⓘ - Output Capacitance: 2015 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TO262 I2PAK

FDI9406F085 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDI9406F085 datasheet

 7.1. Size:517K  fairchild semi
 fdi9406 f085.pdf pdf_icon

FDI9406F085

June 2014 FDI9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 2.2 m D Features Typ RDS(on) = 1.73m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant Qualified to AEC Q101 TO-262AB S FDI SERIES Applications Automotive Engine Control For current package drawing, please refer to the Fairchild Powertrai... See More ⇒

 7.2. Size:282K  inchange semiconductor
 fdi9406.pdf pdf_icon

FDI9406F085

isc N-Channel MOSFET Transistor FDI9406 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =40V(Min) DSS Static Drain-Source On-Resistance R = 2.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpose... See More ⇒

Detailed specifications: FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT , FDMS8090 , FDP030N06BF102 , 2N7000 , FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B , FCPF36N60N , FDD770N15A .

History: FDB3632F085

Keywords - FDI9406F085 MOSFET specs

 FDI9406F085 cross reference
 FDI9406F085 equivalent finder
 FDI9406F085 pdf lookup
 FDI9406F085 substitution
 FDI9406F085 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.