All MOSFET. FDI9406F085 Datasheet

 

FDI9406F085 Datasheet and Replacement


   Type Designator: FDI9406F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 2015 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO262 I2PAK
 

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FDI9406F085 Datasheet (PDF)

 7.1. Size:517K  fairchild semi
 fdi9406 f085.pdf pdf_icon

FDI9406F085

June 2014FDI9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 2.2 m DFeatures Typ RDS(on) = 1.73m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS Compliant Qualified to AEC Q101TO-262ABSFDI SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Powertrai

 7.2. Size:282K  inchange semiconductor
 fdi9406.pdf pdf_icon

FDI9406F085

isc N-Channel MOSFET Transistor FDI9406FEATURESDrain Current I =80A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose

Datasheet: FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT , FDMS8090 , FDP030N06BF102 , IRF9540 , FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B , FCPF36N60N , FDD770N15A .

History: IRF9Z34L | KU2751K | IRFPS40N60K

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