All MOSFET. FCD380N60E Datasheet

 

FCD380N60E Datasheet and Replacement


   Type Designator: FCD380N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 106 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 945 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO252
 

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FCD380N60E Datasheet (PDF)

 ..1. Size:596K  fairchild semi
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FCD380N60E

December 2013FCD380N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 34

 ..2. Size:704K  onsemi
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FCD380N60E

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FCPF36N60N , FDD770N15A , FDMS8820 , FDMS8320LDC , HUF76639SF085 , FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , SPP20N60C3 , FCD900N60Z , FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ .

History: WML18N06TS | IRFH8303PBF | IRF7751G | STFW3N150 | SGO100N08L | JFFC7N65E | IRFU3710ZPBF

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