FCD380N60E PDF and Equivalents Search

 

FCD380N60E Specs and Replacement

Type Designator: FCD380N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 945 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

FCD380N60E substitution

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FCD380N60E datasheet

 ..1. Size:596K  fairchild semi
 fcd380n60e.pdf pdf_icon

FCD380N60E

December 2013 FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 34... See More ⇒

 ..2. Size:704K  onsemi
 fcd380n60e.pdf pdf_icon

FCD380N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FCPF36N60N , FDD770N15A , FDMS8820 , FDMS8320LDC , HUF76639SF085 , FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , K3569 , FCD900N60Z , FCD600N60Z , FDD1600N10ALZD , FDD850N10LD , FCH072N60F , FDMB2308PZ , FDMS3669S , FDZ1323NZ .

Keywords - FCD380N60E MOSFET specs

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