FDN371N Specs and Replacement
Type Designator: FDN371N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 197 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SSOT3
FDN371N substitution
- MOSFET ⓘ Cross-Reference Search
FDN371N datasheet
fdn371n.pdf
September 2001 FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild s high 2.5 A, 20 V. RDS(ON) = 50 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 60 m @ VGS = 2.5 V power management applications. Applications Low gate charge (7.6 nC typical) Load switch Fast... See More ⇒
fdn371n.pdf
FDN371N www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒
fdn372s.pdf
September 2002 FDN372S 30V N-Channel PowerTrench SyncFET General Description Features The FDN372S is designed to replace a single MOSFET 2.6 A, 30 V. RDS(ON) = 40 m @ VGS = 10 V and Schottky diode, used in synchronous DC-DC RDS(ON) = 50 m @ VGS = 4.5 V power supplies, with a single integrated component. This 30V MOSFET is designed to maximize po... See More ⇒
Detailed specifications: FDMS86152 , FDN537N , FDB9406F085 , FDD120AN15F085 , FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L , IRFP450 , FCH104N60F , FDMS86350 , FDU6N25 , HUF76419SF085 , FDMS86252L , FDMS86550 , FDMA908PZ , FDS6679 .
Keywords - FDN371N MOSFET specs
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