FDN371N - аналоги, параметры транзистора - Справочник транзисторов

FDN371N даташит

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September 2001 FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild s high 2.5 A, 20 V. RDS(ON) = 50 m @ VGS = 4.5 V voltage PowerTrench process. It has been optimized for RDS(ON) = 60 m @ VGS = 2.5 V power management applications. Applications Low gate charge (7.6 nC typical) Load switch Fast

..2. Size:2290K cn vbsemi
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FDN371N www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

9.1. Size:142K fairchild semi
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September 2002 FDN372S 30V N-Channel PowerTrench SyncFET General Description Features The FDN372S is designed to replace a single MOSFET 2.6 A, 30 V. RDS(ON) = 40 m @ VGS = 10 V and Schottky diode, used in synchronous DC-DC RDS(ON) = 50 m @ VGS = 4.5 V power supplies, with a single integrated component. This 30V MOSFET is designed to maximize po

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