All MOSFET. FCD620N60ZF Datasheet

 

FCD620N60ZF Datasheet and Replacement


   Type Designator: FCD620N60ZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO252
 

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FCD620N60ZF Datasheet (PDF)

 ..1. Size:619K  fairchild semi
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FCD620N60ZF

November 2013FCD620N60ZFN-Channel SuperFET II FRFET MOSFET600 V, 7.3 A, 620 mFeatures Description 650 V @ TJ = 150oC SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 528 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)

Datasheet: FCH104N60F , FDMS86350 , FDU6N25 , HUF76419SF085 , FDMS86252L , FDMS86550 , FDMA908PZ , FDS6679 , 13N50 , FDMS3660AS , FDMS86202 , FQPF2N80YDTU , FCP190N60GF102 , FDB42AN15F085 , FDPF7N50U , FQP2N40 , FCP104N60F .

History: MTE55N10FP | MTNK6N3 | BUZ111S | KU035N06P | CS3N90A8 | IRLR8715CPBF | IRF7530

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