All MOSFET. FCD620N60ZF Datasheet

 

FCD620N60ZF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCD620N60ZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 625 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO252

 FCD620N60ZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD620N60ZF Datasheet (PDF)

 ..1. Size:619K  fairchild semi
 fcd620n60zf.pdf

FCD620N60ZF FCD620N60ZF

November 2013FCD620N60ZFN-Channel SuperFET II FRFET MOSFET600 V, 7.3 A, 620 mFeatures Description 650 V @ TJ = 150oC SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 528 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)

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