FCD620N60ZF PDF and Equivalents Search

 

FCD620N60ZF Specs and Replacement

Type Designator: FCD620N60ZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: TO252

FCD620N60ZF substitution

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FCD620N60ZF datasheet

 ..1. Size:619K  fairchild semi
 fcd620n60zf.pdf pdf_icon

FCD620N60ZF

November 2013 FCD620N60ZF N-Channel SuperFET II FRFET MOSFET 600 V, 7.3 A, 620 m Features Description 650 V @ TJ = 150oC SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 528 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC)... See More ⇒

Detailed specifications: FCH104N60F , FDMS86350 , FDU6N25 , HUF76419SF085 , FDMS86252L , FDMS86550 , FDMA908PZ , FDS6679 , 5N60 , FDMS3660AS , FDMS86202 , FQPF2N80YDTU , FCP190N60GF102 , FDB42AN15F085 , FDPF7N50U , FQP2N40 , FCP104N60F .

History: IPD60R950C6

Keywords - FCD620N60ZF MOSFET specs

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