All MOSFET. FDH210N08 Datasheet

 

FDH210N08 Datasheet and Replacement


   Type Designator: FDH210N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 462 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 410 nS
   Cossⓘ - Output Capacitance: 2134 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO247
 

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FDH210N08 Datasheet (PDF)

 ..1. Size:761K  fairchild semi
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FDH210N08

December 2013FDH210N08N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mFeatures Description RDS(on) = 4.65 m (Typ.) @ VGS = 10 V, ID = 125 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 232 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 262 pF)

 ..2. Size:300K  inchange semiconductor
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FDH210N08

isc N-Channel MOSFET Transistor FDH210N08FEATURESDrain Current I = 210A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , AO4468 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 .

History: FQT2P25 | RMN3N5R0DN | RUH30150M | KP809B | FDMS86152 | FDS8672S | R6006JNX

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