FDH210N08 Datasheet. Specs and Replacement
Type Designator: FDH210N08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 462 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 410 nS
Cossⓘ - Output Capacitance: 2134 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO247
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FDH210N08 substitution
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FDH210N08 datasheet
fdh210n08.pdf
December 2013 FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 m Features Description RDS(on) = 4.65 m (Typ.) @ VGS = 10 V, ID = 125 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 232 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 262 pF)... See More ⇒
fdh210n08.pdf
isc N-Channel MOSFET Transistor FDH210N08 FEATURES Drain Current I = 210A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 5.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: FDMS86255, FDBL86210F085, FDMS86263P, FCMT199N60, FQA13N50CF109, FQP2P40, FQP3N50C, FDB20N50F, 60N06, FDMC86139P, FDZ1416NZ, FDMS8350L, FDD9407F085, FDMC86259P, FDMS5360LF085, FDMS5362LF085, FDMD84100
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