FDH210N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDH210N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 462 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 210 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: TO247
FDH210N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDH210N08 Datasheet (PDF)
1.1. fdh210n08.pdf 
Size:761K _fairchild_semi
December 2013 FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 232 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 262 pF)
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