FDH210N08 PDF Specs and Replacement
Type Designator: FDH210N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 462 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 232 nC
tr ⓘ - Rise Time: 410 nS
Cossⓘ - Output Capacitance: 2134 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO247
FDH210N08 substitution
FDH210N08 PDF Specs
fdh210n08.pdf
December 2013 FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 m Features Description RDS(on) = 4.65 m (Typ.) @ VGS = 10 V, ID = 125 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 232 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 262 pF)... See More ⇒
fdh210n08.pdf
isc N-Channel MOSFET Transistor FDH210N08 FEATURES Drain Current I = 210A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 5.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , 60N06 , FDMC86139P , FDZ1416NZ , FDMS8350L , FDD9407F085 , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
