All MOSFET. FDH210N08 Datasheet

 

FDH210N08 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDH210N08

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 462 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 210 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: TO247

FDH210N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDH210N08 Datasheet (PDF)

1.1. fdh210n08.pdf Size:761K _fairchild_semi

FDH210N08 FDH210N08

December 2013 FDH210N08 N-Channel UniFETTM MOSFET 75 V, 210 A, 5.5 mΩ Features Description • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 232 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 262 pF)

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