FCH130N60 Specs and Replacement
Type Designator: FCH130N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO247
FCH130N60 substitution
- MOSFET ⓘ Cross-Reference Search
FCH130N60 datasheet
fch130n60.pdf
July 2014 FCH130N60 N-Channel SuperFET II MOSFET 600 V, 28 A, 130 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC) and lower ... See More ⇒
Detailed specifications: FDBL9406F085 , FDMS86163P , FDBL9401F085 , FDD9409F085 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , P55NF06 , FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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