All MOSFET. FCH130N60 Datasheet

 

FCH130N60 Datasheet and Replacement


   Type Designator: FCH130N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO247
 

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FCH130N60 Datasheet (PDF)

 ..1. Size:614K  fairchild semi
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FCH130N60

July 2014FCH130N60N-Channel SuperFET II MOSFET600 V, 28 A, 130 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 112 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 54 nC)and lower

 ..2. Size:361K  inchange semiconductor
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FCH130N60

isc N-Channel MOSFET Transistor FCH130N60FEATURESWith TO-247 packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 130m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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