All MOSFET. FDP86363F085 Datasheet

 

FDP86363F085 Datasheet and Replacement


   Type Designator: FDP86363F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 131 nC
   tr ⓘ - Rise Time: 129 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO220
 

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FDP86363F085 Datasheet (PDF)

 6.1. Size:468K  fairchild semi
 fdp86363 f085.pdf pdf_icon

FDP86363F085

June 2014FDP86363_F085N-Channel PowerTrench MOSFETD80 V, 110 A, 2.8 m Features Typical RDS(on) = 2.4 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantS Qualified to AEC Q101Applications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Controlwebsiteatwww.fair

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