All MOSFET. FCP150N65F Datasheet

 

FCP150N65F Datasheet and Replacement


   Type Designator: FCP150N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 72 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220
 

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FCP150N65F Datasheet (PDF)

 ..1. Size:1376K  fairchild semi
 fcp150n65f.pdf pdf_icon

FCP150N65F

August 2014FCP150N65FN-Channel SuperFET II FRFET MOSFET650 V, 24 A, 150 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 nC) an

 ..2. Size:257K  inchange semiconductor
 fcp150n65f.pdf pdf_icon

FCP150N65F

isc N-Channel MOSFET Transistor FCP150N65FFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

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History: STP34N65M5 | APT15F50K

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