FCP150N65F Datasheet. Specs and Replacement
Type Designator: FCP150N65F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220
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FCP150N65F substitution
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FCP150N65F datasheet
fcp150n65f.pdf
August 2014 FCP150N65F N-Channel SuperFET II FRFET MOSFET 650 V, 24 A, 150 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 nC) an... See More ⇒
fcp150n65f.pdf
isc N-Channel MOSFET Transistor FCP150N65F FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
Detailed specifications: FCH104N60, FCP104N60, FDPF39N20TLDTU, FDPF44N25TRDTU, FDPF51N25RDTU, FQPF5P20RDTU, FDP86363F085, FCPF850N80Z, 2SK3568, FCPF1300N80Z, FDA16N50LDTU, FDPF33N25TRDTU, FCH072N60, FCMT299N60, FDMS8050, FCH150N65FF155, FCPF650N80Z
Keywords - FCP150N65F MOSFET specs
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