FCH150N65FF155 PDF and Equivalents Search

 

FCH150N65FF155 Specs and Replacement

Type Designator: FCH150N65FF155

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO247

FCH150N65FF155 substitution

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FCH150N65FF155 datasheet

 4.1. Size:1448K  fairchild semi
 fch150n65f f155.pdf pdf_icon

FCH150N65FF155

December 2014 FCH150N65F N-Channel SuperFET II FRFET MOSFET 650 V, 24 A, 150 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 n... See More ⇒

Detailed specifications: FCPF850N80Z , FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , AON7410 , FCPF650N80Z , FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A .

History: MTB33N10E | FCH130N60 | FQB46N15 | FCP104N60 | FDMS3016DC

Keywords - FCH150N65FF155 MOSFET specs

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