All MOSFET. FCH150N65FF155 Datasheet

 

FCH150N65FF155 Datasheet and Replacement


   Type Designator: FCH150N65FF155
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO247
 

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FCH150N65FF155 Datasheet (PDF)

 4.1. Size:1448K  fairchild semi
 fch150n65f f155.pdf pdf_icon

FCH150N65FF155

December 2014FCH150N65FN-Channel SuperFET II FRFET MOSFET650 V, 24 A, 150 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 133 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 72 n

Datasheet: FCPF850N80Z , FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU , FCH072N60 , FCMT299N60 , FDMS8050 , RFP50N06 , FCPF650N80Z , FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A .

History: CS4N65FA9HD

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