FCD1300N80Z Specs and Replacement
Type Designator: FCD1300N80Z
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.3 nS
Cossⓘ - Output Capacitance: 22.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO252
FCD1300N80Z substitution
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FCD1300N80Z datasheet
fcd1300n80z.pdf
August 2014 FCD1300N80Z N-Channel SuperFET II MOSFET 800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.5... See More ⇒
Detailed specifications: FCMT299N60, FDMS8050, FCH150N65FF155, FCPF650N80Z, FCPF260N65FL1, FCPF380N65FL1, FCP130N60, FCPF400N80ZL1, IRF530, FDMA86151L, FPF1C2P5BF07A, FPF1C2P5MF07AM, FCP170N60, FCPF190N65FL1, FCU4300N80Z, FDD9410F085, FDBL0065N40
Keywords - FCD1300N80Z MOSFET specs
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