All MOSFET. FCD1300N80Z Datasheet

 

FCD1300N80Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCD1300N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.2 nC
   trⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 22.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO252

 FCD1300N80Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD1300N80Z Datasheet (PDF)

 ..1. Size:880K  fairchild semi
 fcd1300n80z.pdf

FCD1300N80Z FCD1300N80Z

August 2014FCD1300N80ZN-Channel SuperFET II MOSFET800 V, 4 A, 1.3 Features Description RDS(on) = 1.05 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 16.2 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 1.5

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