FCU4300N80Z PDF and Equivalents Search

 

FCU4300N80Z Specs and Replacement

Type Designator: FCU4300N80Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm

Package: TO251 IPAK

FCU4300N80Z substitution

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FCU4300N80Z datasheet

 ..1. Size:662K  fairchild semi
 fcu4300n80z.pdf pdf_icon

FCU4300N80Z

December 2014 FCU4300N80Z N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 Features Description RDS(on) = 3.4 Typ.) SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 6.8 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 0... See More ⇒

Detailed specifications: FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A , FPF1C2P5MF07AM , FCP170N60 , FCPF190N65FL1 , TK10A60D , FDD9410F085 , FDBL0065N40 , FDBL0090N40 , FDBL0120N40 , FDBL0630N150 , FDMD8280 , FCU850N80Z , FDMS5361LF085 .

Keywords - FCU4300N80Z MOSFET specs

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