All MOSFET. FCU4300N80Z Datasheet

 

FCU4300N80Z Datasheet and Replacement


   Type Designator: FCU4300N80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.8 nC
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO251 IPAK
 

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FCU4300N80Z Datasheet (PDF)

 ..1. Size:662K  fairchild semi
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FCU4300N80Z

December 2014FCU4300N80ZN-Channel SuperFET II MOSFET800 V, 1.6 A, 4.3 Features Description RDS(on) = 3.4 Typ.) SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 6.8 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 0

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N7125

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