FDMS5361LF085 Specs and Replacement
Type Designator: FDMS5361LF085
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 176 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PQFN5X6
FDMS5361LF085 substitution
- MOSFET ⓘ Cross-Reference Search
FDMS5361LF085 datasheet
fdms5362l f085.pdf
December 2013 FDMS5362L_F085 N-Channel Power Trench MOSFET 60V, 22A, 33m Features Typ rDS(on) = 26m at VGS = 10V, ID = 17.6A Typ Qg(tot) = 17nC at VGS = 10V, ID = 17.6A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current packa... See More ⇒
fdms5360l f085.pdf
January 2014 FDMS5360L_F085 N-Channel Power Trench MOSFET 60V, 60A, 8.5m Features Typ rDS(on) = 6.5m at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator For current package d... See More ⇒
Detailed specifications: FCU4300N80Z , FDD9410F085 , FDBL0065N40 , FDBL0090N40 , FDBL0120N40 , FDBL0630N150 , FDMD8280 , FCU850N80Z , 5N60 , FCD850N80Z , 2SK3503 , 2SK3255 , 2SJ648 , 2SK1937-01 , 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 .
History: 2SK3503
Keywords - FDMS5361LF085 MOSFET specs
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FDMS5361LF085 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK3503
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