SPB70N10L PDF and Equivalents Search

 

SPB70N10L Specs and Replacement

Type Designator: SPB70N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PTO263

SPB70N10L substitution

- MOSFET ⓘ Cross-Reference Search

 

SPB70N10L datasheet

 ..1. Size:146K  infineon
 spi70n10l spp70n10l spb70n10l.pdf pdf_icon

SPB70N10L

SPI70N10L SPP70N10L,SPB70N10L SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 1 P-TO220-3-1 Type Package Ordering Code Marking SPP70N10L P-TO220-3-1 Q67040-S4175 70N10L SPB70N10L... See More ⇒

 6.1. Size:101K  infineon
 spb70n10.pdf pdf_icon

SPB70N10L

Preliminary Data SPP 70N10L SIPMOS Power Transistor Product Summary Features Drain source voltage 100 V VDS N channel Drain-Source on-state resistance 0.016 RDS(on) Enhancement mode Continuous drain current 70 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S S... See More ⇒

Detailed specifications: 2SK537 , SPP100N08S2-07 , SPB100N08S2-07 , SST270 , SST271 , SPD35N10 , SPI70N10L , SPP70N10L , AO3400A , SI2309DS , MT3205 , BUZ78 , NVD2955 , J203 , J204 , SST201 , SST202 .

History: G120N04 | PV551BA | IRLB4132

Keywords - SPB70N10L MOSFET specs

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