All MOSFET. SPB70N10L Datasheet

 

SPB70N10L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPB70N10L
   Marking Code: 70N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 3.22 nC
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PTO263

 SPB70N10L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB70N10L Datasheet (PDF)

 ..1. Size:146K  infineon
 spi70n10l spp70n10l spb70n10l.pdf

SPB70N10L SPB70N10L

SPI70N10LSPP70N10L,SPB70N10LSIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated321P-TO220-3-1Type Package Ordering Code MarkingSPP70N10L P-TO220-3-1 Q67040-S417570N10LSPB70N10L

 6.1. Size:101K  infineon
 spb70n10.pdf

SPB70N10L SPB70N10L

Preliminary DataSPP 70N10LSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 100 VVDS N channelDrain-Source on-state resistance 0.016RDS(on) Enhancement modeContinuous drain current 70 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SS

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History: SP8005

 

 
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