MT3205 MOSFET. Datasheet pdf. Equivalent
Type Designator: MT3205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 107 nS
Drain-Source Capacitance (Cd): 450 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm
Package: TO220
MT3205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MT3205 Datasheet (PDF)
0.1. mt3205.pdf 
Size:915K _no
MOS-TECH Semiconductor Co.,LTD Mar 2010MT3205N-Channel Power MOSFET 55V, 110A, 7.2mFeatures Description RDS(on) = 6.1m ( Typ.)@ VGS = 10V, ID = 59A This N-Channel MOSFET is produced using MOS-TECH Semiconductors advanced PowerTrench process that has High performance trench technology for extermly low RDS(on) been especially tailored to minimize
9.1. mt3203.pdf Size:482K _1
MOS-TECH Semiconductor Co.,LTDN MT3203N-Channel Low Qg MOSFET30V, 100A, 3.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/ DC converters using rDS(ON) = 4.5m, VGS = 4.5V, ID = 40Aeither synchronous or conven tional swit ching PWMcontro
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