J204
MOSFET. Datasheet pdf. Equivalent
Type Designator: J204
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Id|ⓘ - Maximum Drain Current: 0.05
A
Tjⓘ - Maximum Junction Temperature: 135
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100
Ohm
Package:
TO92
J204
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J204
Datasheet (PDF)
..1. Size:22K calogic
j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf 
N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range
0.1. Size:87K philips
buj204ax hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ204AXSilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ204AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting balla
0.2. Size:83K philips
buj204a hg 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ204ASilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ204AGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applicati
0.4. Size:78K vishay
j201 j202 j204c sst201 sst202 sst204c.pdf
J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201
0.5. Size:1130K jiangsu
cj2045.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate TransistorsSOT-23-6L CJ2045 Dual 40V complementary transistorsFEATURES 40V complementary device High hFE Mounting cost and area can be cut in halfMARKINGEQUIVALENT CIRCUIT 2045=Device code2045Solid point=Pin1 positioning point XXXX=Date CodePIN1Tr1 NPN and Tr2 PNP Absolute Maximum Rat
0.6. Size:1163K kexin
2sj204-3.pdf
SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-200m A1 2+0.02 RDS(ON) 8 (VGS =-10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
0.7. Size:1150K kexin
2sj204.pdf
SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
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