J204 Datasheet. Specs and Replacement
Type Designator: J204 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 135 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO92
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J204 substitution
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J204 datasheet
j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf
N-Channel JFET General Purpose Amplifier CORPORATION J201 J204 / SST201 SST204 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range... See More ⇒
buj204ax hg 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting balla... See More ⇒
buj204a hg 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applicati... See More ⇒
Detailed specifications: SPI70N10L, SPP70N10L, SPB70N10L, SI2309DS, MT3205, BUZ78, NVD2955, J203, AO4468, SST201, SST202, SST203, SST204, JCS12N60CT, JCS12N60FT, SI2301DS, ULB4132
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