J204 Datasheet and Replacement

N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range

DISCRETE SEMICONDUCTORSDATA SHEETBUJ204AXSilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ204AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting balla

DISCRETE SEMICONDUCTORSDATA SHEETBUJ204ASilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ204AGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applicati

J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate TransistorsSOT-23-6L CJ2045 Dual 40V complementary transistorsFEATURES 40V complementary device High hFE Mounting cost and area can be cut in halfMARKINGEQUIVALENT CIRCUIT 2045=Device code2045Solid point=Pin1 positioning point XXXX=Date CodePIN1Tr1 NPN and Tr2 PNP Absolute Maximum Rat

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-200m A1 2+0.02 RDS(ON) 8 (VGS =-10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit