Справочник MOSFET. J204

 

J204 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: J204
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.36 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.05 A
   Tjⓘ - Максимальная температура канала: 135 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm
   Тип корпуса: TO92

 Аналог (замена) для J204

 

 

J204 Datasheet (PDF)

 ..1. Size:22K  calogic
j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf

J204

N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range

 0.1. Size:87K  philips
buj204ax hg 2.pdf

J204
J204

DISCRETE SEMICONDUCTORSDATA SHEETBUJ204AXSilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ204AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting balla

 0.2. Size:83K  philips
buj204a hg 2.pdf

J204
J204

DISCRETE SEMICONDUCTORSDATA SHEETBUJ204ASilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ204AGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applicati

 0.3. Size:323K  nec
2sj204.pdf

J204
J204

 0.4. Size:78K  vishay
j201 j202 j204c sst201 sst202 sst204c.pdf

J204
J204

J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201

 0.5. Size:1130K  jiangsu
cj2045.pdf

J204
J204

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate TransistorsSOT-23-6L CJ2045 Dual 40V complementary transistorsFEATURES 40V complementary device High hFE Mounting cost and area can be cut in halfMARKINGEQUIVALENT CIRCUIT 2045=Device code2045Solid point=Pin1 positioning point XXXX=Date CodePIN1Tr1 NPN and Tr2 PNP Absolute Maximum Rat

 0.6. Size:1163K  kexin
2sj204-3.pdf

J204
J204

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-200m A1 2+0.02 RDS(ON) 8 (VGS =-10V) +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

 0.7. Size:1150K  kexin
2sj204.pdf

J204
J204

SMD Type MOSFETP-Channel MOSFET2SJ204SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V1 2 ID =-200m A+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 8 (VGS =-10V) RDS(ON) 13 (VGS =-4V) Compementary to 2SK15821. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

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