LND250 Datasheet and Replacement
Type Designator: LND250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 0.013 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 450 nS
Cossⓘ - Output Capacitance: 2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO236AB SOT23
LND250 substitution
LND250 Datasheet (PDF)
lnd250.pdf
LND250N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdownThe LND250 is a high voltage N-channel depletion mode Low power drive requirement(normally-on) transistor utilizing Supertexs lateral DMOS Ease of parallelingtechnology. The gate is ESD protected. Excellent thermal stabilityThe LND250 is ideal for high voltage
Datasheet: 2SK2564 , 2SK1537 , 2SK2879-01 , 2SK2367 , 2SK2368 , LND150K1 , LND150N3 , LND150N8 , IRF1404 , FS5UM-5 , FS5VS-5 , FS5KM-5 , FS7UM-5 , FS7VS-5 , FS7KM-5 , FS10UM-5 , FS10VS-5 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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