All MOSFET. LND250 Datasheet

 

LND250 Datasheet and Replacement


   Type Designator: LND250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.013 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 450 nS
   Cossⓘ - Output Capacitance: 2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO236AB SOT23
      - MOSFET Cross-Reference Search

 

LND250 Datasheet (PDF)

 ..1. Size:434K  supertex
 lnd250.pdf pdf_icon

LND250

LND250N-Channel Depletion-ModeDMOS FETFeatures General Description Free from secondary breakdownThe LND250 is a high voltage N-channel depletion mode Low power drive requirement(normally-on) transistor utilizing Supertexs lateral DMOS Ease of parallelingtechnology. The gate is ESD protected. Excellent thermal stabilityThe LND250 is ideal for high voltage

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RTF020P02TL | DMP2104LP | IRFBG20 | DMN2300UFB4 | TK2P60D | DMN60H3D5SK3

Keywords - LND250 MOSFET datasheet

 LND250 cross reference
 LND250 equivalent finder
 LND250 lookup
 LND250 substitution
 LND250 replacement

 

 
Back to Top

 


 
.