2N5640 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N5640
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.05 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO92
2N5640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N5640 Datasheet (PDF)
2n5640.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5640/DJFETs SwitchingNChannel Depletion2N56401 DRAIN31GATE 232 SOURCECASE 2904, STYLE 5TO92 (TO226AA)Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 VdcReverse GateSource Voltage VGSR 30 VdcForward Gate Current IGF 10 mAdcTotal Device Dissip
2n5643.pdf
2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C BE E FEATURES:C B Minimum Gain = 7.6 dB Output Power = 40 W IDH Omnigold Metalization System JG#8-32 UNC-2AFMAXIMUM RATINGS E IC 5.0
Datasheet: FS10VS-9 , FS10KM-9 , FS10SM-9 , 2SK3599-01MR , 2SK1506 , 2SK3538 , 2SK3699-01MR , 2SK2171 , IRFZ46N , FTP08N50 , FTA08N50 , STP16NE06 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , DMZ6005E .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100