All MOSFET. 2N5640 Datasheet

 

2N5640 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N5640
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: TO92

 2N5640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5640 Datasheet (PDF)

 ..1. Size:126K  motorola
2n5640.pdf

2N5640 2N5640

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5640/DJFETs SwitchingNChannel Depletion2N56401 DRAIN31GATE 232 SOURCECASE 2904, STYLE 5TO92 (TO226AA)Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 VdcReverse GateSource Voltage VGSR 30 VdcForward Gate Current IGF 10 mAdcTotal Device Dissip

 9.1. Size:14K  advanced-semi
2n5643.pdf

2N5640

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C BE E FEATURES:C B Minimum Gain = 7.6 dB Output Power = 40 W IDH Omnigold Metalization System JG#8-32 UNC-2AFMAXIMUM RATINGS E IC 5.0

 9.2. Size:182K  ssm
2n5641 2n5642 2n5643.pdf

2N5640 2N5640

Datasheet: FS10VS-9 , FS10KM-9 , FS10SM-9 , 2SK3599-01MR , 2SK1506 , 2SK3538 , 2SK3699-01MR , 2SK2171 , IRFZ46N , FTP08N50 , FTA08N50 , STP16NE06 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , DMZ6005E .

 

 
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