All MOSFET. 2N5640 Datasheet

 

2N5640 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5640

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Maximum Drain-Source On-State Resistance (Rds): 100 Ohm

Package: TO92, TO226AA

2N5640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N5640 Datasheet (PDF)

1.1. 2n5640.pdf Size:126K _motorola

2N5640
2N5640

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5640/D JFETs Switching N Channel  Depletion 2N5640 1 DRAIN 3 1 GATE 2 3 2 SOURCE CASE 29 04, STYLE 5 TO 92 (TO 226AA) Ra

5.1. 2n5643.pdf Size:14K _advanced-semi

2N5640

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45° A wideband large-signal amplifier stages in the 125 – 175 MHz range. C B E E FEATURES: ØC B • Minimum Gain = 7.6 dB • Output Power = 40 W I D H • Omnigold™ Metalization System J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 5.0

5.2. 2n5641 2n5642 2n5643.pdf Size:182K _ssm

2N5640
2N5640



Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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