2N5640 Datasheet. Specs and Replacement

Type Designator: 2N5640  📄📄 

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm

Package: TO92

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2N5640 substitution

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2N5640 datasheet

 ..1. Size:126K  motorola
 2n5640.pdf pdf_icon

2N5640

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5640/D JFETs Switching N Channel Depletion 2N5640 1 DRAIN 3 1 GATE 2 3 2 SOURCE CASE 29 04, STYLE 5 TO 92 (TO 226AA) Rating Symbol Value Unit Drain Source Voltage VDS 30 Vdc Drain Gate Voltage VDG 30 Vdc Reverse Gate Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissip... See More ⇒

 9.1. Size:14K  advanced-semi
 2n5643.pdf pdf_icon

2N5640

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C B E E FEATURES C B Minimum Gain = 7.6 dB Output Power = 40 W I D H Omnigold Metalization System J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 5.0... See More ⇒

 9.2. Size:182K  ssm
 2n5641 2n5642 2n5643.pdf pdf_icon

2N5640

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Detailed specifications: FS10VS-9, FS10KM-9, FS10SM-9, 2SK3599-01MR, 2SK1506, 2SK3538, 2SK3699-01MR, 2SK2171, RFP50N06, FTP08N50, FTA08N50, STP16NE06, STP16NE06FP, FTX30P35G, FTZ15N35G, FTZ20N01G5, FTZ30P35G

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