All MOSFET. 2N5640 Datasheet

 

2N5640 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N5640

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Maximum Drain-Source On-State Resistance (Rds): 100 Ohm

Package: TO92_TO226AA

2N5640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N5640 Datasheet (PDF)

1.1. 2n5640.pdf Size:126K _motorola

2N5640
2N5640

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5640/D JFETs Switching N–Channel — Depletion 2N5640 1 DRAIN 3 1 GATE 2 3 2 SOURCE CASE 29–04, STYLE 5 TO–92 (TO–226AA) Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Reverse Gate–Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissip

5.1. 2n5643.pdf Size:14K _advanced-semi

2N5640

2N5643 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI 2N5643 is Designed for .112x45 A wideband large-signal amplifier stages in the 125 175 MHz range. C B E E FEATURES: OC B Minimum Gain = 7.6 dB Output Power = 40 W I D H Omnigold Metalization System J G #8-32 UNC-2A F MAXIMUM RATINGS E IC 5.0 A MINIMUM MA

5.2. 2n5641 2n5642 2n5643.pdf Size:182K _ssm

2N5640
2N5640

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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