DMZ6005E Specs and Replacement
Type Designator: DMZ6005E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 2.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
Package: SOT23
DMZ6005E substitution
- MOSFET ⓘ Cross-Reference Search
DMZ6005E datasheet
dmz6005e.pdf
DMZ6005E Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 700 5mA Rugged PolysiliconGate Cell Structure Fast Switching Speed RoHS Compliant SOT-23 Halogen-free available D Drain Source Applications G Normally-o... See More ⇒
dmz6005e.pdf
SMD Type MOSFET N-Channel MOSFET DMZ6005E (KMZ6005E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 600V ID = 20mA RDS(ON) 700m (VGS = 0 V) 1 2 +0.1 +0.05 0.95 -0.1 Fast Switching Speed 0.1 -0.01 +0.1 1.9 -0.1 RoHS Compliant Halogen-free available 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 ... See More ⇒
dmz6012e.pdf
DMZ6012E Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 120 100mA Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant Halogen-free available Applications Normally-on Switches SMPS St... See More ⇒
Detailed specifications: 2N5640 , FTP08N50 , FTA08N50 , STP16NE06 , STP16NE06FP , DMU4523D , DMD4523D , DMA4523D , IRFZ24N , DMZ6012E , FTE08N06G , FTE11N06G , FTF16N06G , FTP04N60A , FTA04N60A , FTP04N60B , FTA04N60B .
Keywords - DMZ6005E MOSFET specs
DMZ6005E cross reference
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DMZ6005E substitution
DMZ6005E replacement
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