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FTU04N60A Specs and Replacement


   Type Designator: FTU04N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
 

 FTU04N60A substitution

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FTU04N60A Specs

 ..1. Size:530K  ark-micro
 ftu04n60a ftd04n60a.pdf pdf_icon

FTU04N60A

FTU04N60A/FTD04N60A 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.0 4.5A Low ON Resistance Low Gate Charge (typical 20nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information P... See More ⇒

 6.1. Size:529K  ark-micro
 ftu04n60b ftd04n60b.pdf pdf_icon

FTU04N60A

FTU04N60B/FTD04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.8 3.6A Low ON Resistance Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Inf... See More ⇒

 7.1. Size:363K  ark-micro
 ftu04n65c ftd04n65c.pdf pdf_icon

FTU04N60A

FTU04N65C/FTD04N65C Doc. NO QRD-310 650V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 650V 2.6 4.0A Low Gate Charge Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free D Halogen-free available Applications High Efficiency SMPS G G Adaptor/Charger D S Active PFC G S D LCD... See More ⇒

Detailed specifications: FTP04N60B , FTA04N60B , FTP07N60 , FTA07N60 , FTU02N60B , FTD02N60B , FTU02N70 , FTD02N70 , IRFB7545 , FTD04N60A , FTU04N60B , FTD04N60B , FTU04N65C , FTD04N65C , FTU06N70C , FTD06N70C , 2SK1487 .

Keywords - FTU04N60A MOSFET specs

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