All MOSFET. 2SK2358 Datasheet

 

2SK2358 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2358
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F

 2SK2358 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2358 Datasheet (PDF)

 ..1. Size:55K  nec
 2sk2357 2sk2358.pdf

2SK2358 2SK2358

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2357/2SK2358SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor(in millimeters)designed for high voltage switching applications.4.5 0.210.0 0.33.2 0.2FEATURES2.7 0.2 Low On-Resistance2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID =

 8.1. Size:417K  toshiba
 2sk2350.pdf

2SK2358 2SK2358

2SK2350 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2350 Switching Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.26 (typ.) DS (ON) High forward transfer admittance : |Y | = 8 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 200 V) DS Enhance

 8.2. Size:499K  toshiba
 2sk2352.pdf

2SK2358 2SK2358

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 8.3. Size:90K  nec
 2sk2359 2sk2360.pdf

2SK2358 2SK2358

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2359/2SK2360SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel(in millimeters)MOS Field Effect Transistor designed for high voltage switchingapplications. 10.6 MAX. 4.8 MAX.3.6 0.21.3 0.210.0FEATURES Low On-Resistance42SK2359: RDS(o

 8.4. Size:214K  inchange semiconductor
 2sk2350.pdf

2SK2358 2SK2358

isc N-Channel MOSFET Transistor 2SK2350DESCRIPTIONDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV

 8.5. Size:214K  inchange semiconductor
 2sk2352.pdf

2SK2358 2SK2358

isc N-Channel MOSFET Transistor 2SK2352DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 8.6. Size:58K  inchange semiconductor
 2sk2351.pdf

2SK2358 2SK2358

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2351 DESCRIPTION Drain Current ID= 6A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Fast Switching Speed APPLICATIONS Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage 30 V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK2400

 

 
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