AOD436 PDF and Equivalents Search

 

AOD436 Specs and Replacement

Type Designator: AOD436

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 306 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO252

AOD436 substitution

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AOD436 datasheet

 ..1. Size:141K  aosemi
 aod436.pdf pdf_icon

AOD436

www.DataSheet4U.com AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 60A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) ... See More ⇒

 9.1. Size:110K  aosemi
 aod434.pdf pdf_icon

AOD436

AOD434 N-Channel Enhancement Mode Field Effect Transistor General Description Features VDS (V) = 20V The AOD434 uses advanced trench technology to ID = 18A (VGS = 10V) provide excellent RDS(ON), low gate charge and RDS(ON) ... See More ⇒

 9.2. Size:838K  cn vbsemi
 aod438.pdf pdf_icon

AOD436

AOD438 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLU... See More ⇒

Detailed specifications: SSM40N03P, IRF830B, IRFS830B, CLY2, 2SK2369, 2SK2370, 2SK2357, 2SK2358, 50N06, BSN304, J309G, J310G, SSF5508, SSF7509, 2SK1078, 2SK2018-01L, 2SK2018-01S

Keywords - AOD436 MOSFET specs

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