All MOSFET. AOD436 Datasheet

 

AOD436 Datasheet and Replacement


   Type Designator: AOD436
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.6 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO252
 

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AOD436 Datasheet (PDF)

 ..1. Size:141K  aosemi
 aod436.pdf pdf_icon

AOD436

www.DataSheet4U.comAOD436N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD436 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and low ID = 60A (VGS = 10V)gate resistance. This device is ideally suited for use RDS(ON)

 9.1. Size:110K  aosemi
 aod434.pdf pdf_icon

AOD436

AOD434N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 20VThe AOD434 uses advanced trench technology to ID = 18A (VGS = 10V)provide excellent RDS(ON), low gate charge and RDS(ON)

 9.2. Size:838K  cn vbsemi
 aod438.pdf pdf_icon

AOD436

AOD438www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

Datasheet: SSM40N03P , IRF830B , IRFS830B , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 , 50N06 , BSN304 , J309G , J310G , SSF5508 , SSF7509 , 2SK1078 , 2SK2018-01L , 2SK2018-01S .

History: 3N60F | SI7448DP

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