J309G Specs and Replacement
Type Designator: J309G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 0.03 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
Package: TO92
J309G substitution
- MOSFET ⓘ Cross-Reference Search
J309G datasheet
j309g j310g.pdf
J309, J310 Preferred Device JFET VHF/UHF Amplifiers N-Channel Depletion Features http //onsemi.com Pb-Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 25 Vdc GATE Gate -Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc 2 SOURCE Total Device Dissipation @ TA = 25 C PD 350 mW Derate above = 25 C 2.8 mW/ ... See More ⇒
Detailed specifications: IRFS830B, CLY2, 2SK2369, 2SK2370, 2SK2357, 2SK2358, AOD436, BSN304, IRFZ44, J310G, SSF5508, SSF7509, 2SK1078, 2SK2018-01L, 2SK2018-01S, 2SK2012, 2SK2623
Keywords - J309G MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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