All MOSFET. J309G Datasheet

 

J309G Datasheet and Replacement


   Type Designator: J309G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
   Package: TO92
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J309G Datasheet (PDF)

 ..1. Size:66K  onsemi
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J309G

J309, J310Preferred Device JFET VHF/UHF AmplifiersN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEGate -Source Voltage VGS 25 VdcForward Gate Current IGF 10 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRF7473 | 2SK1571

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