All MOSFET. J309G Datasheet

 

J309G Datasheet and Replacement


   Type Designator: J309G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 500 Ohm
   Package: TO92
 

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J309G Datasheet (PDF)

 ..1. Size:66K  onsemi
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J309G

J309, J310Preferred Device JFET VHF/UHF AmplifiersN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Source Voltage VDS 25 VdcGATEGate -Source Voltage VGS 25 VdcForward Gate Current IGF 10 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/

Datasheet: IRFS830B , CLY2 , 2SK2369 , 2SK2370 , 2SK2357 , 2SK2358 , AOD436 , BSN304 , IRF640 , J310G , SSF5508 , SSF7509 , 2SK1078 , 2SK2018-01L , 2SK2018-01S , 2SK2012 , 2SK2623 .

History: IRLTS6342PBF | FS5VS-5 | NCE3400A | SM1A02NSFP | FCH190N65FF085 | IRF450B | BSS138E

Keywords - J309G MOSFET datasheet

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