All MOSFET. BR8N60 Datasheet

 

BR8N60 Datasheet and Replacement


   Type Designator: BR8N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220

 BR8N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BR8N60 Datasheet (PDF)

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BR8N60

BR8N60(BRCS8N60R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well su

Datasheet: BR75N75 , BR7N60 , BR7N80 , BR80N06 , BR80N08 , BR80N10 , BR80N75 , BR8205 , AON7410 , BRA2N60 , BRA4N65 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R .

History: BR75N75 | BLS65R560-U

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