BRA2N60 Datasheet and Replacement
Type Designator: BRA2N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO262
BRA2N60 substitution
BRA2N60 Datasheet (PDF)
bra2n60.pdf
BRA2N60(BRCS2N60A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high
Datasheet: BR7N60 , BR7N80 , BR80N06 , BR80N08 , BR80N10 , BR80N75 , BR8205 , BR8N60 , IRF1010E , BRA4N65 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C .
History: BRA4N60 | BRB50N06 | BRCS2310MA
Keywords - BRA2N60 MOSFET datasheet
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BRA2N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: BRA4N60 | BRB50N06 | BRCS2310MA
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