BRA2N60 Specs and Replacement
Type Designator: BRA2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 35 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO262
BRA2N60 substitution
- MOSFET ⓘ Cross-Reference Search
BRA2N60 datasheet
bra2n60.pdf
BRA2N60(BRCS2N60A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high... See More ⇒
Detailed specifications: BR7N60, BR7N80, BR80N06, BR80N08, BR80N10, BR80N75, BR8205, BR8N60, 12N60, BRA4N65, BRA7N80, AON6788, CS2N60, CS2N60F, JCS2N60V, JCS2N60R, JCS2N60C
Keywords - BRA2N60 MOSFET specs
BRA2N60 cross reference
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BRA2N60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SVD2N60M
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