All MOSFET. BRA4N65 Datasheet

 

BRA4N65 Datasheet and Replacement


   Type Designator: BRA4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO262
 

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BRA4N65 Datasheet (PDF)

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BRA4N65

BRA4N65(BRCS4N65A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

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BRA4N65

BRA4N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N7271H3

Keywords - BRA4N65 MOSFET datasheet

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