All MOSFET. BRA4N65 Datasheet

 

BRA4N65 Datasheet and Replacement


   Type Designator: BRA4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO262
 

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BRA4N65 Datasheet (PDF)

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BRA4N65

BRA4N65(BRCS4N65A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

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BRA4N65

BRA4N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc

Datasheet: BR7N80 , BR80N06 , BR80N08 , BR80N10 , BR80N75 , BR8205 , BR8N60 , BRA2N60 , 4435 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , JCS2N60F .

History: SSM3J02T | 2SK3025 | AON6788

Keywords - BRA4N65 MOSFET datasheet

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