BRA4N65 MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

BRA4N65 Specs and Replacement

Type Designator: BRA4N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO262

BRA4N65 substitution

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BRA4N65 datasheet

..1. Size:393K blue-rocket-elect
bra4n65.pdf pdf_icon

BRA4N65(BRCS4N65A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high... See More ⇒

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bra4n60.pdf pdf_icon

BRA4N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficienc... See More ⇒

Detailed specifications: BR7N80, BR80N06, BR80N08, BR80N10, BR80N75, BR8205, BR8N60, BRA2N60, 5N65, BRA7N80, AON6788, CS2N60, CS2N60F, JCS2N60V, JCS2N60R, JCS2N60C, JCS2N60F