All MOSFET. BRA7N80 Datasheet

 

BRA7N80 Datasheet and Replacement


   Type Designator: BRA7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO262
 

 BRA7N80 substitution

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BRA7N80 Datasheet (PDF)

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BRA7N80

BRA7N80(BRCS7N80A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high

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BRA7N80

BRA7N65 Rev. A Jul.-2023 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well sui

Datasheet: BR80N06 , BR80N08 , BR80N10 , BR80N75 , BR8205 , BR8N60 , BRA2N60 , BRA4N65 , IRF530 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , JCS2N60F , SI4963DY .

History: TK7P65W

Keywords - BRA7N80 MOSFET datasheet

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