BRA7N80 Datasheet and Replacement
Type Designator: BRA7N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO262
BRA7N80 substitution
BRA7N80 Datasheet (PDF)
bra7n80.pdf

BRA7N80(BRCS7N80A) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package.. / Features ,, Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high
bra7n65.pdf

BRA7N65 Rev. A Jul.-2023 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well sui
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FQP12P10
Keywords - BRA7N80 MOSFET datasheet
BRA7N80 cross reference
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BRA7N80 substitution
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History: FQP12P10



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